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Nucleation and growth of NiSi from transrotational domains
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10.1063/1.2437058
/content/aip/journal/apl/90/5/10.1063/1.2437058
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/5/10.1063/1.2437058
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Sheet resistance vs annealing time at (dashed line): after the incubation time NiSi reaction is triggered with a characteristic time . The fitting curve of the reduction of the sheet resistance during NiSi reaction is superimposed (continuous line). [(b) and (c)] Arrhenius plot of and , respectively, as a function of the layer thickness.

Image of FIG. 2.
FIG. 2.

Plan-view TEM analyses of the structure (a) of the thin and (b) of the thick silicide layer. The density of bending contour is lower in the thin silicide.

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM analyses of the reacted (a) thin and (b) thick NiSi layers. The thin silicide has large very flat grains.

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/content/aip/journal/apl/90/5/10.1063/1.2437058
2007-02-01
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nucleation and growth of NiSi from Ni2Si transrotational domains
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/5/10.1063/1.2437058
10.1063/1.2437058
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