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Impact of Ni-silicide grain orientation on the strain and stress fields induced in patterned silicon
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Bright Field image of one of the structures used for strain field investigation under the stack (gate); the distance between silicide lines is . The substrate reference frame and the Si crystallographic orientations are specified. (b) Strain as measured by CBED at different depths under the gate; the distribution of the strain values exhibits a marked asymmetry. The simulated curve at depth is also shown.

Image of FIG. 2.
FIG. 2.

Structure with a long channel: (a) Bright Field image; (b) stress from CBED measurements. An asymmetric stress distribution was found for this structure.

Image of FIG. 3.
FIG. 3.

Simulated stress at the interface with the gate oxide for a structure with a long channel, for cases in which the two silicides at the gate sides have (a) a different orientation; (b) the same orientation. The orientations of the grains for each silicide line are specified in the table. The case “” is referred to silicide lines whose CTE value is averaged over the three NiSi lattice directions. The simulations confirm the significant impact that the silicide grains orientation have on stress values and symmetry.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of Ni-silicide grain orientation on the strain and stress fields induced in patterned silicon