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Undoped electron-hole bilayers in a double quantum well
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10.1063/1.2437664
/content/aip/journal/apl/90/5/10.1063/1.2437664
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/5/10.1063/1.2437664
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Cutaway schematic of the device structure. (b) Band diagram schematic with , , and sufficient to form the 2DEG and 2DHG.

Image of FIG. 2.
FIG. 2.

(Color online) Mobility vs density and (black squares) for device A and (red circles) for device B.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Four-terminal longitudinal resistance of the 2DHG (larger, red) , and the 2DEG (smaller, black) of device B. The filling factor of electrons and holes is identified at selected minima. (b) Matched density Hall resistance traces for the 2DEG (solid) and 2DHG (dashed) of sample A. The filling factor is on the right axis.

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/content/aip/journal/apl/90/5/10.1063/1.2437664
2007-01-30
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Undoped electron-hole bilayers in a GaAs∕AlGaAs double quantum well
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/5/10.1063/1.2437664
10.1063/1.2437664
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