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Kinetic study of Al-mole fraction in grown on -plane sapphire and AlN bulk substrates by metal-organic vapor-phase epitaxy
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10.1063/1.2437681
/content/aip/journal/apl/90/5/10.1063/1.2437681
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/5/10.1063/1.2437681
/content/aip/journal/apl/90/5/10.1063/1.2437681
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/content/aip/journal/apl/90/5/10.1063/1.2437681
2007-01-30
2014-07-14
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Kinetic study of Al-mole fraction in AlxGa1−xN grown on c-plane sapphire and AlN bulk substrates by metal-organic vapor-phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/5/10.1063/1.2437681
10.1063/1.2437681
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