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Cross-sectional bright-field TEM images of (a) as sputter-deposited ZnO layer with in situ created amorphous intermediate layer on Si substrate, (b) after annealing, (c) after electron-beam irradiation for , and (d) after extended electron irradiation for .
(a) High-resolution TEM image of the electron irradiated structure of Figs. 1(d) and 1(b) corresponding fast-fourier-transformed (FFT) electron-diffraction patterns of Zn nanocrystals, labeled as A and B, respectively in (a).
Auger electron spectroscopy depth profiles of ZnO films grown on Si substrates: (a) as-grown and (b) annealed at .
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