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(Color online) PL spectra of MS films embedded with Si or Ge nanocrystals, as well as the pure MS template, together with a schematic drawing illustrating the configuration of the ITO/nc-Si-embedded photodetectors. The inset shows cross-sectional TEM images of the MS films with high density of silicon nanocrystals.
(Color online) Current-voltage characteristics of ITO/nc-Si-embedded devices in the dark and illuminated by 420 and light of . The inset is a plot of photocurrents for the same device irradiated with 325 and light of 1, 3, and , respectively, in which the photocurrents mean the measured current values after subtraction of the dark current.
(Color online) Spectral dependence of the photoresponse of detectors with ITO/nc-Si-embedded and structures.
(Color online) Illustration of transistorlike operation of an ITO/nc-Si-embedded device under reveres bias and illumination. The symbols and in the figure represent photoexcited and injected currents, respectively.
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