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Three-dimensional atom probe studies of an multiple quantum well structure: Assessment of possible indium clustering
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color) Elemental atom maps of the QW region of the sample from the 3DAP data. In (a) only the Ga (blue) and In (orange) atoms are displayed. The four QWs that were furthest from the surface of the wafer are clearly visible as indium-containing layers. In (b) only the Au (green) and In (orange) atoms are displayed. The region to the left of the QWs shows that Au has penetrated into the wafer, probably during Pt deposition in the FIB during sample preparation. This appears to have disrupted the QWs that were closest to the surface of the sample. However there is negligible Au signal (at the noise level of the instrument) in the region of the lowest four QWs, and these are undisturbed.

Image of FIG. 2.
FIG. 2.

Composition frequency distributions from the lowest three QWs, which were certainly not damaged during the sample preparation. Each QW was divided into bins of 100 atoms, and the indium fraction was calculated for each bin. It is clear that no part of any QW has . The solid line shows the binomial distribution that would be expected in the case of a random ternary alloy. As the experimental data show a good fit to the binomial distribution, there is no evidence for nonrandom compositional fluctuations.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering