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Structural properties of epitaxial (111) thin films on (0001)
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10.1063/1.2435978
/content/aip/journal/apl/90/6/10.1063/1.2435978
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/6/10.1063/1.2435978
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematics of the (111) and (0001) surfaces. The atomic spacing of the O atoms and Si atoms, respectively, indicates an 8.8% lattice mismatch at the interface.

Image of FIG. 2.
FIG. 2.

RHEED and cross-sectional HRTEM images of on . (a) As-deposited film is amorphous and no interfacial layer is observed. (b) Following postdeposition annealing at for , the film crystallizes and an abrupt interface with the substrate is observed.

Image of FIG. 3.
FIG. 3.

(a) Selected area electron diffraction pattern of a film on . (b) Radial scan along the specular direction of a film on (0001). The (222) peak is evident and no other diffraction peaks related to the film are observed. The inset shows the interference fringes of the (222) peak in log scale. (c) Rocking curve of the (222) reflection. The peak is resolution limited. (d) Phi scans around the and reflections.

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/content/aip/journal/apl/90/6/10.1063/1.2435978
2007-02-08
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural properties of epitaxial γ-Al2O3 (111) thin films on 4H-SiC (0001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/6/10.1063/1.2435978
10.1063/1.2435978
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