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(Color) Scanning electron microscope oblique image of the vertical quantum dot device with an gate insulator. The inset is an illustration of the cross-sectional view of the device.
(a) Gate voltage dependence of the drain-source characteristics for with step. (b) The gate bias dependence of the gate leakage current density. The data were taken at .
(Color) (a) Color-scale plot of the gate voltage dependence ( sweep rate of ) of characteristics measured at when the was swept from . (b) The characteristics of the diameter control sample. (c) The characteristics of the diameter quantum dot at .
(Color) Coulomb diamonds depended upon the sweep direction of the gate. (a) was swept from and (b) from , respectively.
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