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(In,Ga)As gated-vertical quantum dot with an insulator
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10.1063/1.2437060
    T. Kita1,a), D. Chiba1, Y. Ohno2 and H. Ohno3,b)
    + View Affiliations - Hide Affiliations
    Affiliations:
    1 Semiconductor Spintronics Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, 1-18 Kitamemachi, Aoba-ku, Sendai 980-0023, Japan and Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
    2 Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
    3 Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan and Semiconductor Spintronics Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, 1-18 Kitamemachi, Aoba-ku, Sendai 980-0023, Japan
    a) Electronic mail: tkita@riec.tohoku.ac.jp
    b) Author to whom correspondence should be addressed; FAX: +81-22-217-5553; electronic mail: ohno@riec.tohoku.ac.jp
    Appl. Phys. Lett. 90, 062102 (2007); http://dx.doi.org/10.1063/1.2437060
/content/aip/journal/apl/90/6/10.1063/1.2437060
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/6/10.1063/1.2437060
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color) Scanning electron microscope oblique image of the vertical quantum dot device with an gate insulator. The inset is an illustration of the cross-sectional view of the device.

Image of FIG. 2.
FIG. 2.

(a) Gate voltage dependence of the drain-source characteristics for with step. (b) The gate bias dependence of the gate leakage current density. The data were taken at .

Image of FIG. 3.
FIG. 3.

(Color) (a) Color-scale plot of the gate voltage dependence ( sweep rate of ) of characteristics measured at when the was swept from . (b) The characteristics of the diameter control sample. (c) The characteristics of the diameter quantum dot at .

Image of FIG. 4.
FIG. 4.

(Color) Coulomb diamonds depended upon the sweep direction of the gate. (a) was swept from and (b) from , respectively.

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/content/aip/journal/apl/90/6/10.1063/1.2437060
2007-02-05
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: (In,Ga)As gated-vertical quantum dot with an Al2O3 insulator
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/6/10.1063/1.2437060
10.1063/1.2437060
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