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(In,Ga)As gated-vertical quantum dot with an insulator
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10.1063/1.2437060
    T. Kita1,a), D. Chiba1, Y. Ohno2 and H. Ohno3,b)
    + View Affiliations - Hide Affiliations
    Affiliations:
    1 Semiconductor Spintronics Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, 1-18 Kitamemachi, Aoba-ku, Sendai 980-0023, Japan and Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
    2 Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
    3 Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan and Semiconductor Spintronics Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, 1-18 Kitamemachi, Aoba-ku, Sendai 980-0023, Japan
    a) Electronic mail: tkita@riec.tohoku.ac.jp
    b) Author to whom correspondence should be addressed; FAX: +81-22-217-5553; electronic mail: ohno@riec.tohoku.ac.jp
    Appl. Phys. Lett. 90, 062102 (2007); http://dx.doi.org/10.1063/1.2437060
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/content/aip/journal/apl/90/6/10.1063/1.2437060
2007-02-05
2014-11-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: (In,Ga)As gated-vertical quantum dot with an Al2O3 insulator
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/6/10.1063/1.2437060
10.1063/1.2437060
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