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Nanometer scale x-ray absorption spectroscopy and chemical states mapping of ultra thin oxides on silicon using electrostatic force microscopy
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10.1063/1.2437073
/content/aip/journal/apl/90/6/10.1063/1.2437073
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/6/10.1063/1.2437073
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Figures

Image of FIG. 1.
FIG. 1.

Expected photoionization process of Si oxides. (a) At a defect center, the x-ray excitation of a Si electron, followed by rapid relaxation of a trapped electron may lead to a long lived trapped hole. (b) At an undefected site, after the x-ray excitation, a free valence state electron rapidly occupies the Si core hole, and thus this site rapidly recovers to its initial state.

Image of FIG. 2.
FIG. 2.

(a) Si X-EFM spectrum of a native oxide on (111)-oriented Si wafer. (b) A conventional XAS spectrum of this sample. (c) A three-dimensional band diagram. observed in the X-EFM spectrum.

Image of FIG. 3.
FIG. 3.

(a) Si X-EFM spectra at (a) a depression in and (b) a plateau on a chemical oxide grown on a (100)-oriented Si wafer. (c) Reference X-EFM spectrum of native oxide on (111)-oriented Si wafer.

Image of FIG. 4.
FIG. 4.

(Color) (a) AFM image of a depression in the chemical oxide film and (b) corresponding X-EFM image. (c) Line profile of AFM and X-EFM signals across the depression denoted by white line in (a) and (b).

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/content/aip/journal/apl/90/6/10.1063/1.2437073
2007-02-05
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanometer scale x-ray absorption spectroscopy and chemical states mapping of ultra thin oxides on silicon using electrostatic force microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/6/10.1063/1.2437073
10.1063/1.2437073
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