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Expected photoionization process of Si oxides. (a) At a defect center, the x-ray excitation of a Si electron, followed by rapid relaxation of a trapped electron may lead to a long lived trapped hole. (b) At an undefected site, after the x-ray excitation, a free valence state electron rapidly occupies the Si core hole, and thus this site rapidly recovers to its initial state.
(a) Si X-EFM spectrum of a native oxide on (111)-oriented Si wafer. (b) A conventional XAS spectrum of this sample. (c) A three-dimensional band diagram. observed in the X-EFM spectrum.
(a) Si X-EFM spectra at (a) a depression in and (b) a plateau on a chemical oxide grown on a (100)-oriented Si wafer. (c) Reference X-EFM spectrum of native oxide on (111)-oriented Si wafer.
(Color) (a) AFM image of a depression in the chemical oxide film and (b) corresponding X-EFM image. (c) Line profile of AFM and X-EFM signals across the depression denoted by white line in (a) and (b).
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