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Deformation potential carrier-phonon scattering in semiconducting carbon nanotube transistors
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10.1063/1.2437127
/content/aip/journal/apl/90/6/10.1063/1.2437127
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/6/10.1063/1.2437127
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Theoretical room temperature conductance of a single-walled carbon nanotube. For each tube, 2 and diameters, the total conductance is when three subbands are considered. Also shown is the case when only one subband is considered ( here). Results also give the mean free path in microns multiplied by the number of included subbands .

Image of FIG. 2.
FIG. 2.

(Color online) Comparison between experimental (Ref. 5) and theoretical field-effect mobility peaks as a function of single-walled nanotube diameter at .

Image of FIG. 3.
FIG. 3.

(Color online) Simulations of the theoretical peak conductance for a length single-walled carbon nanotube as a function of diameter at . Results also indicate the on state mean free path and the on resistance of the nanotube (excluding contacts).

Image of FIG. 4.
FIG. 4.

Comparison of theoretical and experimental (Ref. 5) peak field-effect mobilities and on resistances vs temperature. A single-walled nanotube of length and a diameter of is considered. The on resistance is , where is (Ref. 5).

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/content/aip/journal/apl/90/6/10.1063/1.2437127
2007-02-06
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Deformation potential carrier-phonon scattering in semiconducting carbon nanotube transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/6/10.1063/1.2437127
10.1063/1.2437127
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