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Fermi level shift in quantum wells upon annealing studied by contactless electroreflectance
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10.1063/1.2437729
/content/aip/journal/apl/90/6/10.1063/1.2437729
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/6/10.1063/1.2437729
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Sketch of band bending in GaAs-based Van Hoof structures with a GaInNAsSb QW in the region of undoped GaAs layer. The dashed line corresponds to a situation when the band bending is not modified by the QW whereas the solid line corresponds to a situation when the QW influences band bending in this structure. Since the GaAs cap and buffer layers are undoped and high quality, it is assumed that the electric field in these layers is constant and results form the Fermi level pining at GaAs surface, GaInNAsSb QW, and -type GaAs substrate.

Image of FIG. 2.
FIG. 2.

Room temperature contactless electroreflectance spectra for the as-grown (a) and annealed (b) single QWs (thin solid lines) together with the fitting curve (thick solid lines) and the moduli of individual CER resonances (dashes lines).

Image of FIG. 3.
FIG. 3.

Room temperature contactless electroreflectance spectra for the as-grown and annealed single QWs in the vicinity of GaAs-related absorption (a) together with the analysis of Franz-Keldysh oscillations (b).

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/content/aip/journal/apl/90/6/10.1063/1.2437729
2007-02-05
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fermi level shift in GaInNAsSb∕GaAs quantum wells upon annealing studied by contactless electroreflectance
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/6/10.1063/1.2437729
10.1063/1.2437729
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