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Enhanced and retarded diffusion of arsenic in silicon by point defect engineering
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10.1063/1.2450663
/content/aip/journal/apl/90/6/10.1063/1.2450663
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/6/10.1063/1.2450663
/content/aip/journal/apl/90/6/10.1063/1.2450663
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/content/aip/journal/apl/90/6/10.1063/1.2450663
2007-02-05
2014-07-13
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced and retarded diffusion of arsenic in silicon by point defect engineering
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/6/10.1063/1.2450663
10.1063/1.2450663
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