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Comparative study of InAs quantum dots with different InGaAs capping methods
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) (a) XSTM image of the type-A, type-B, and type-C QD layers. Image , sample bias , and tunneling current . (a) Inset: PL spectra of a type-A QD PL sample before (solid line) and after (dashed line) UHV annealing at . PL peak positions do not shift. XSTM images of individual (b) type-A, (c) type-B, and (d) type-C InAs QDs. Nanoscale inhomogeneous In distribution is more evident in the type-A and type-B dots.

Image of FIG. 2.
FIG. 2.

(Color online) Line profile crossing the QD layer. The red line is the strain relaxation profile of a quantum well, with the center position as a fitting parameter. The green line is the residual strain relaxation due to a QD. The vertical outward buckle and the QD height are deduced from a Lorentz fit. and are also depicted in Fig. 1(b).

Image of FIG. 3.
FIG. 3.

(Color online) plot for the type-A, -B, and -C QD ensembles [, , , defined in text]. The insets depict two different configurations of a QD under the cleaved plane.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparative study of InAs quantum dots with different InGaAs capping methods