1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Ambipolar conduction in transistors using solution grown InAs nanowires with Cd doping
Rent:
Rent this article for
USD
10.1063/1.2457249
/content/aip/journal/apl/90/6/10.1063/1.2457249
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/6/10.1063/1.2457249
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Electrical characteristics of a representative Cd doped InAs nanowire FET. The black curve shows ambipolar conduction of the Cd doped InAs nanowire before plasma. The red curve shows channel only conduction after plasma. Insets depict band diagrams for InAs nanowire FET at : (i) negative gate bias, corresponding to -channel conduction (accumulation), and (ii) positive gate bias, corresponding to -channel conduction (inversion). In each case, the zero-bias condition is illustrated by a dashed line.

Image of FIG. 2.
FIG. 2.

(Color online) Measured source drain current vs source drain bias for a representative device.

Image of FIG. 3.
FIG. 3.

(Color online) Variable temperature measurements for Cd doped InAs nanowire FET. These curves show vs temperature with and varying from .

Loading

Article metrics loading...

/content/aip/journal/apl/90/6/10.1063/1.2457249
2007-02-06
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ambipolar conduction in transistors using solution grown InAs nanowires with Cd doping
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/6/10.1063/1.2457249
10.1063/1.2457249
SEARCH_EXPAND_ITEM