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Ultrawide band quantum dot light emitting device by postfabrication laser annealing
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10.1063/1.2458515
/content/aip/journal/apl/90/6/10.1063/1.2458515
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/6/10.1063/1.2458515
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic diagrams of (a) top and (b) cross-section views of the QD light emitting device with optical access for laser annealing.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Schematic diagram of QD light emitting device under laser annealing process and (b) room temperature PL peak wavelength (∎) and peak intensity (●) as a function of position after laser annealing.

Image of FIG. 3.
FIG. 3.

(Color online) Room temperature power density as a function of wavelength at a current density of measured from a QD ridge waveguide LED for as-fabricated (—) and after laser annealing from a narrow band gap facet (∙∙∙∙∙) and from a wide band gap facet (-∙-∙-) of the device. The inset shows a schematic diagram of the QD LED with two different types of band gap at both ends.

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/content/aip/journal/apl/90/6/10.1063/1.2458515
2007-02-05
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrawide band quantum dot light emitting device by postfabrication laser annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/6/10.1063/1.2458515
10.1063/1.2458515
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