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(Color online) Preparation sequence of the freestanding GaN substrate separated by in situ lift-off.
[(a)–(c)] SEM images of the freestanding GaN layers grown by two-step growth method. (a) Top surface; (b) back-side surface; (c) side cut. [(d)–(f)] SEM images of the freestanding GaN layers grown at . [(d) and (e)] top surface; (f) side cut. [Inset of (a)] AFM images of a area, .
(a) XRD peak of (10-10); the -axis lattice constant is ; (b) XRD peaks of (0002), (0004), and (0006). The -axis lattice constant is .
(Color online) Depth profiling of low-temperature micro-PL of the side cut of freestanding GaN layer. The top solid line shows the PL spectrum of bulk-GaN grown by Na flux method (Ref. 18). (Inset) The sample was positioned, the back side was referred as a starting point, and the top surface was expressed by .
(Color online) Typical (0002) XRD map of the freestanding GaN layers separated by in situ lift-off. (Inset) Schematic diagram of the misoriented layers.
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