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Strain relaxation mechanism in a reverse compositionally graded SiGe heterostructure
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10.1063/1.2472135
/content/aip/journal/apl/90/6/10.1063/1.2472135
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/6/10.1063/1.2472135
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional TEM image of the RG heterostructure showing dislocation loops in the Si substrate.

Image of FIG. 2.
FIG. 2.

(Color online) (a) (224) reciprocal lattice map of the RG heterostructure. (b) Depth profile of Ge concentration (square) and residual strain within the RG heterostructure obtained by fitting RLM result (circle) and the theoretical calculation (dotted line).

Image of FIG. 3.
FIG. 3.

(Color online) (a) Plan-view TEM image of different interfaces in the heterostructure. The inset illustrates the TEM sample thickness and the direction of the electron beam. (b) Optical microscope image of the relaxed SiGe surface after Wright etch.

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/content/aip/journal/apl/90/6/10.1063/1.2472135
2007-02-07
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain relaxation mechanism in a reverse compositionally graded SiGe heterostructure
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/6/10.1063/1.2472135
10.1063/1.2472135
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