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Electrical property improvements of high- gate oxide by in situ nitrogen incorporation during atomic layer deposition
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10.1063/1.2472189
/content/aip/journal/apl/90/6/10.1063/1.2472189
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/6/10.1063/1.2472189
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SIMS profiles of as-deposited (a) ALD and (b) ALD films using water and as a single source for reactants, respectively.

Image of FIG. 2.
FIG. 2.

TEM image of as-deposited (a) ALD and (b) ALD films using water and as a single source for reactants, respectively.

Image of FIG. 3.
FIG. 3.

Capacitance-voltage curves of MOS capacitors with ALD and as insulators.

Image of FIG. 4.
FIG. 4.

Leakage current density–electric field curves with ALD and as insulators.

Image of FIG. 5.
FIG. 5.

Time dependent dielectric breakdown data for MOS capacitors with ALD (solid line) and (dotted line) as insulators. The voltage stress measurement was done at an applied voltage of .

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/content/aip/journal/apl/90/6/10.1063/1.2472189
2007-02-09
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical property improvements of high-k gate oxide by in situ nitrogen incorporation during atomic layer deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/6/10.1063/1.2472189
10.1063/1.2472189
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