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Electrical property improvements of high- gate oxide by in situ nitrogen incorporation during atomic layer deposition
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10.1063/1.2472189
/content/aip/journal/apl/90/6/10.1063/1.2472189
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/6/10.1063/1.2472189
/content/aip/journal/apl/90/6/10.1063/1.2472189
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/content/aip/journal/apl/90/6/10.1063/1.2472189
2007-02-09
2014-08-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical property improvements of high-k gate oxide by in situ nitrogen incorporation during atomic layer deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/6/10.1063/1.2472189
10.1063/1.2472189
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