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Crystallized fraction [i.e., sum of from to ] (solid), density of dimers (dashed), and density of multimers (dash-dot) for an annealing cycle comprising successive , pulses at intervals, followed by a reset (amorphization) pulse.
Temporal evolution of the crystallized fraction for different initial cluster size distributions, in which a 70% crystallized starting material consists entirely of dimers (solid) or multimers (dashed). Annealing cycle consisted of , pulses applied at intervals. The pulses are used here to capture the strikingly different dynamic behavior that can occur; differences are still present in this case with longer pulses, but are not so marked.
Crystalline fraction (top) as a function of time during an annealing comprising of pulses at temperatures of (four pulses), (two pulses), (two pulses), and (two pulses).
Final resistivity of phase-change cell as a function of the temperature of annealing pulses of duration of (solid line), (dashed), (dotted), and (dash-dot). A U-shaped curve with an additive response at lower temperatures and a direct-overwrite response at higher temperatures is revealed. Room temperature conductivity of crystalline and amorphous phases assumed, respectively, to be 3250 and .
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