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Master-equation approach to understanding multistate phase-change memories and processors
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View: Figures


Image of FIG. 1.
FIG. 1.

Crystallized fraction [i.e., sum of from to ] (solid), density of dimers (dashed), and density of multimers (dash-dot) for an annealing cycle comprising successive , pulses at intervals, followed by a reset (amorphization) pulse.

Image of FIG. 2.
FIG. 2.

Temporal evolution of the crystallized fraction for different initial cluster size distributions, in which a 70% crystallized starting material consists entirely of dimers (solid) or multimers (dashed). Annealing cycle consisted of , pulses applied at intervals. The pulses are used here to capture the strikingly different dynamic behavior that can occur; differences are still present in this case with longer pulses, but are not so marked.

Image of FIG. 3.
FIG. 3.

Crystalline fraction (top) as a function of time during an annealing comprising of pulses at temperatures of (four pulses), (two pulses), (two pulses), and (two pulses).

Image of FIG. 4.
FIG. 4.

Final resistivity of phase-change cell as a function of the temperature of annealing pulses of duration of (solid line), (dashed), (dotted), and (dash-dot). A U-shaped curve with an additive response at lower temperatures and a direct-overwrite response at higher temperatures is revealed. Room temperature conductivity of crystalline and amorphous phases assumed, respectively, to be 3250 and .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Master-equation approach to understanding multistate phase-change memories and processors