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Stacking fault generation during relaxation of silicon germanium on insulator layers obtained by the Ge condensation technique
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10.1063/1.2470722
/content/aip/journal/apl/90/7/10.1063/1.2470722
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/7/10.1063/1.2470722
/content/aip/journal/apl/90/7/10.1063/1.2470722
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/content/aip/journal/apl/90/7/10.1063/1.2470722
2007-02-12
2014-09-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stacking fault generation during relaxation of silicon germanium on insulator layers obtained by the Ge condensation technique
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/7/10.1063/1.2470722
10.1063/1.2470722
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