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Stacking fault generation during relaxation of silicon germanium on insulator layers obtained by the Ge condensation technique
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10.1063/1.2470722
/content/aip/journal/apl/90/7/10.1063/1.2470722
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/7/10.1063/1.2470722
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

TEM pictures of SGOI layers obtained by Ge condensation after (a) oxidation at , (b) and oxidation at , and (c) and oxidation at followed by a and oxidation at . The as grown structure was a layer grown on a SOI substrate.

Image of FIG. 2.
FIG. 2.

(Color online) TEM picture of two stacking faults produced by SiGe strain relaxation. The presence of low and high energy nearest neighbor stacking faults is highlighted.

Image of FIG. 3.
FIG. 3.

(Color online) Excess stresses difference on 60° and 90° dislocations vs the Ge enrichment for an initial Ge content of 11% and an initial SiGe thickness of . A critical enrichment is determined as 59% of Ge content.

Image of FIG. 4.
FIG. 4.

(Color online) Determination of the critical enrichment for stacking fault generation as a function of the initial parameters: and . The critical enrichment never exceeds 82%.

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/content/aip/journal/apl/90/7/10.1063/1.2470722
2007-02-12
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stacking fault generation during relaxation of silicon germanium on insulator layers obtained by the Ge condensation technique
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/7/10.1063/1.2470722
10.1063/1.2470722
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