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Effect of oxygen vacancies on spin-dependent tunneling in magnetic tunnel junctions
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Density of states of bulk MgO (shaded area) and (a) center and states for a cell (solid line). The dashed line indicates the approximate position of the levels corrected for self-interaction, (b) center in cell. is the position of the Fermi level in MTJs.

Image of FIG. 2.
FIG. 2.

(Color online) Charge density calculated in the energy window containing the defect level (a) and (b) states ( MgO cell). Vacancy is in the middle, the positions of the and ions are indicated for one unit cell. Exponential scale is used with red indicating high and blue low charge density.

Image of FIG. 3.
FIG. 3.

(Color online) Majority-spin transmission probability vs energy per cell in with 5 ML of MgO for ideal MgO and MgO with O vacancies ( cell). The arrow indicates the bottom of the majority band.

Image of FIG. 4.
FIG. 4.

(Color online) Decay rate for the state in ideal MgO (solid lines) and MgO with O vacancies in cell (dashed lines) obtained (a) from the complex band structure of bulk MgO and (b) from the probability density in . The position of the Fermi energy in MTJs is at .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of oxygen vacancies on spin-dependent tunneling in Fe∕MgO∕Fe magnetic tunnel junctions