1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Nanostructure evolution in hydrogenated amorphous silicon during hydrogen effusion and crystallization
Rent:
Rent this article for
USD
10.1063/1.2435959
/content/aip/journal/apl/90/8/10.1063/1.2435959
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/8/10.1063/1.2435959
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SAXS data from an film grown at in the as-deposited, post-hydrogen-release, and postcrystallization states. The solid lines are modeled best fits to the data, as described in the text.

Image of FIG. 2.
FIG. 2.

(a) Geometric evolution of voids, as determined from SAXS tilting experiments, with film growth rates shown. AD indicates as-deposited films, HR is completion of the hydrogen release anneal and PC is postcrystallization. (b) Cross-sectional TEM image of a crystallized Si film revealing voids oriented in the direction of film growth.

Image of FIG. 3.
FIG. 3.

Void evolution during hydrogen release and crystallization anneals vs film deposition rate: (a) length of void minor axis, (b) aspect ratio of void, (c) volume per void, and (d) void fraction in film. In general, fewer voids exist in the film after annealing, but remaining voids increase in size and become more spherical. Note: deposition rate data are slightly offset for clarity.

Loading

Article metrics loading...

/content/aip/journal/apl/90/8/10.1063/1.2435959
2007-02-23
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanostructure evolution in hydrogenated amorphous silicon during hydrogen effusion and crystallization
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/8/10.1063/1.2435959
10.1063/1.2435959
SEARCH_EXPAND_ITEM