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(Color online) Layer structure and the growth conditions for the Ge film grown on the Si substrate with metamorphic buffer layers. Note that was grown at two growth rates, the Ge composition set at 80% and 90%, and the Si substrate implanted with high dose ions.
Cross-sectional TEM images of sample (a) with a pre-ion-implantation into the Si substrate; the inserted image is the high-resolution TEM image at the interface between the metamorphic layer and the Si substrate. (b) The metamorphic grown on the Si substrate without a pre-ion-implantation into the Si substrate.
(a) Double crystal x-ray data indicating variations at a  orientation for the metamorphic buffer layer on the Si substrate with a pre-ion-implantation. (b) Double crystal x-ray difference data indicating variations at  orientation for the metamorphic buffer layer on the Si substrate without a pre-ion-implantation.
(Color online) Atomic force microscopy image of the surface morphology of the sample with a pre-ion-implantation. The root mean square (rms) of the roughness is .
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