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Use of pre-ion-implantation on Si substrate to enhance the strain relaxation of the metamorphic buffer layer for the growth of Ge layer on Si substrate
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10.1063/1.2475361
/content/aip/journal/apl/90/8/10.1063/1.2475361
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/8/10.1063/1.2475361
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Layer structure and the growth conditions for the Ge film grown on the Si substrate with metamorphic buffer layers. Note that was grown at two growth rates, the Ge composition set at 80% and 90%, and the Si substrate implanted with high dose ions.

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM images of sample (a) with a pre-ion-implantation into the Si substrate; the inserted image is the high-resolution TEM image at the interface between the metamorphic layer and the Si substrate. (b) The metamorphic grown on the Si substrate without a pre-ion-implantation into the Si substrate.

Image of FIG. 3.
FIG. 3.

(a) Double crystal x-ray data indicating variations at a [004] orientation for the metamorphic buffer layer on the Si substrate with a pre-ion-implantation. (b) Double crystal x-ray difference data indicating variations at [004] orientation for the metamorphic buffer layer on the Si substrate without a pre-ion-implantation.

Image of FIG. 4.
FIG. 4.

(Color online) Atomic force microscopy image of the surface morphology of the sample with a pre-ion-implantation. The root mean square (rms) of the roughness is .

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/content/aip/journal/apl/90/8/10.1063/1.2475361
2007-02-22
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1−x metamorphic buffer layer for the growth of Ge layer on Si substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/8/10.1063/1.2475361
10.1063/1.2475361
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