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Use of pre-ion-implantation on Si substrate to enhance the strain relaxation of the metamorphic buffer layer for the growth of Ge layer on Si substrate
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10.1063/1.2475361
/content/aip/journal/apl/90/8/10.1063/1.2475361
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/8/10.1063/1.2475361
/content/aip/journal/apl/90/8/10.1063/1.2475361
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/content/aip/journal/apl/90/8/10.1063/1.2475361
2007-02-22
2014-10-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1−x metamorphic buffer layer for the growth of Ge layer on Si substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/8/10.1063/1.2475361
10.1063/1.2475361
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