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Optically stimulated picosecond field emission pulses from gated -silicon field emitter arrays
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10.1063/1.2710475
/content/aip/journal/apl/90/8/10.1063/1.2710475
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/8/10.1063/1.2710475
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Modified Fowler-Nordheim plots for FEA showing the optical sensitivity of the emission current for cw lights (63, 140, and for 532, 830, and wavelength lights, respectively). The optical power for each wavelength was chosen to give the same level of total emission. The inset shows the SEM image of a single emitter cell (the gate aperture diameter is ).

Image of FIG. 2.
FIG. 2.

Experimental arrangement for optical pulse modulation of the FEA through the aperture opening of the gate metal.

Image of FIG. 3.
FIG. 3.

Real time scope pictures of the pulse train response for photodiode (top profile) and FEA devices (bottom profile). The inset shows the sampling oscilloscope picture of the single pulse response for the FEA device.

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/content/aip/journal/apl/90/8/10.1063/1.2710475
2007-02-21
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optically stimulated picosecond field emission pulses from gated p-silicon field emitter arrays
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/8/10.1063/1.2710475
10.1063/1.2710475
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