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(a) AFM images and (b) plan-view FE-SEM images of the samples annealed at .
TEM images of the samples annealed at ; (a) -contrast ⟨110⟩ XTEM image, (b) -contrast ⟨100⟩ plan-view TEM image, (c) -contrast ⟨110⟩ XTEM image near the deep pit in Fig. 3(a), and (d) ⟨110⟩ HRTEM lattice image near the top surface.
(a) Raman spectra of samples annealed at different temperatures. The peak positions of the Si–Si bonds in the bulk Si substrate at , in the at , and in the relaxed-SiGe layer at were identified. (b) Relative changes in the in-plane and out-of-plane lattice parameters obtained by IFFT analysis of the high-resolution lattice images of the layers. The in-plane and out-of-plane lattice parameters were obtained by analyzing the spacing of the interfringes obtained from the inverse Fourier transformation of the (111) and (002) patterns, respectively, calculated by the Fourier transformation of the high-resolution lattice fringes. As the reference values, the theoretical and measured values by IFFT of the bulk Si(001) substrate were also marked.
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