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Substrate pit formation and surface wetting during thermal annealing of strained-Si/relaxed- heterostructure
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10.1063/1.2696228
/content/aip/journal/apl/90/9/10.1063/1.2696228
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/9/10.1063/1.2696228
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) AFM images and (b) plan-view FE-SEM images of the samples annealed at .

Image of FIG. 2.
FIG. 2.

TEM images of the samples annealed at ; (a) -contrast ⟨110⟩ XTEM image, (b) -contrast ⟨100⟩ plan-view TEM image, (c) -contrast ⟨110⟩ XTEM image near the deep pit in Fig. 3(a), and (d) ⟨110⟩ HRTEM lattice image near the top surface.

Image of FIG. 3.
FIG. 3.

(a) Raman spectra of samples annealed at different temperatures. The peak positions of the Si–Si bonds in the bulk Si substrate at , in the at , and in the relaxed-SiGe layer at were identified. (b) Relative changes in the in-plane and out-of-plane lattice parameters obtained by IFFT analysis of the high-resolution lattice images of the layers. The in-plane and out-of-plane lattice parameters were obtained by analyzing the spacing of the interfringes obtained from the inverse Fourier transformation of the (111) and (002) patterns, respectively, calculated by the Fourier transformation of the high-resolution lattice fringes. As the reference values, the theoretical and measured values by IFFT of the bulk Si(001) substrate were also marked.

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/content/aip/journal/apl/90/9/10.1063/1.2696228
2007-02-28
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Substrate pit formation and surface wetting during thermal annealing of strained-Si/relaxed-Si0.78Ge0.22 heterostructure
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/9/10.1063/1.2696228
10.1063/1.2696228
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