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(a) Cross-sectional lattice image of -thick -thick -thick resonant tunneling diode structure observed from ⟨110⟩ direction by transmission electron microscopy (TEM). (b) Magnification of image (a), focusing on structure. Right side inset figures indicate RHEED patterns of corresponding layers.
Schematic layer structure and conduction band profile of double-barrier resonant tunneling diode fabricated in this study.
Room-temperature (RT) current-voltage characteristics of double-barrier resonant tunneling diode structures for the sample with quantum-well layer thickness of (a) ML and (b) ML . Clear negative differential resistance (NDR) was observed at RT. The maximum peak-to-valley current ratio was over 10 and peak current density was .
Peak voltages of RTDs as a function of quantum-well layer thickness. Solid lines and solid circles indicate peak voltages calculated from the transmission coefficient and current density using the Esaki-Tsu formula.
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