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Room temperature negative differential resistance of double-barrier resonant tunneling diode structures grown on Si(100) substrates
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10.1063/1.2709508
/content/aip/journal/apl/90/9/10.1063/1.2709508
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/9/10.1063/1.2709508
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Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-sectional lattice image of -thick -thick -thick resonant tunneling diode structure observed from ⟨110⟩ direction by transmission electron microscopy (TEM). (b) Magnification of image (a), focusing on structure. Right side inset figures indicate RHEED patterns of corresponding layers.

Image of FIG. 2.
FIG. 2.

Schematic layer structure and conduction band profile of double-barrier resonant tunneling diode fabricated in this study.

Image of FIG. 3.
FIG. 3.

Room-temperature (RT) current-voltage characteristics of double-barrier resonant tunneling diode structures for the sample with quantum-well layer thickness of (a) ML and (b) ML . Clear negative differential resistance (NDR) was observed at RT. The maximum peak-to-valley current ratio was over 10 and peak current density was .

Image of FIG. 4.
FIG. 4.

Peak voltages of RTDs as a function of quantum-well layer thickness. Solid lines and solid circles indicate peak voltages calculated from the transmission coefficient and current density using the Esaki-Tsu formula.

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/content/aip/journal/apl/90/9/10.1063/1.2709508
2007-02-26
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room temperature negative differential resistance of CdF2∕CaF2 double-barrier resonant tunneling diode structures grown on Si(100) substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/9/10.1063/1.2709508
10.1063/1.2709508
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