1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Properties of epitaxial GaN on refractory metal substrates
Rent:
Rent this article for
USD
10.1063/1.2709512
/content/aip/journal/apl/90/9/10.1063/1.2709512
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/9/10.1063/1.2709512
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) First-order Raman scattering spectra of the . Note the small increase in the phonon linewidths in the region away from the central part of the film.

Image of FIG. 2.
FIG. 2.

Low-temperature and low-resolution photoluminescence spectra of the GaN film grown on TiC.

Image of FIG. 3.
FIG. 3.

(Color online) High-resolution photoluminescence spectrum of the film in the near band edge spectral region. Note that the FEA emission line becomes dominant with increasing sample temperature.

Image of FIG. 4.
FIG. 4.

characteristic of the GaN film on (111) TiC mounted on a device carrier, measured with a point probe at the GaN surface.

Loading

Article metrics loading...

/content/aip/journal/apl/90/9/10.1063/1.2709512
2007-02-28
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Properties of epitaxial GaN on refractory metal substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/9/10.1063/1.2709512
10.1063/1.2709512
SEARCH_EXPAND_ITEM