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Schematic structure of current-injection T-wire lasers. T wires are formed at the intersections of two quantum wells, as shown in the magnified drawing. Percentages in parentheses represent Al content of .
Current vs bias-voltage characteristics of a T-wire laser at various temperatures between 5 and . The inset shows an enlarged view of the vicinity of the threshold voltages. Leakage currents were less than at all the temperatures.
(a) Photoluminescence spectrum at , where emissions from the T wires, the arm wells, and the stem wells were observed. (b) Electroluminescence spectra of a T-wire laser from the cavity edge for various bias currents at . Continuous-wave single-mode lasing above was observed at . The dashed line in the bottom panel shows the T-wire peak in the photoluminescence spectrum at shown in (a).
Optical power vs current characteristics at various temperatures. The inset shows several curves at near the threshold currents. At , the sample did not show lasing. (b) Threshold current and (c) differential quantum efficiency plotted against temperature.
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