1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Temperature-dependent current injection and lasing in T-shaped quantum-wire laser diodes with perpendicular - and -doping layers
Rent:
Rent this article for
USD
10.1063/1.2709521
/content/aip/journal/apl/90/9/10.1063/1.2709521
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/9/10.1063/1.2709521
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic structure of current-injection T-wire lasers. T wires are formed at the intersections of two quantum wells, as shown in the magnified drawing. Percentages in parentheses represent Al content of .

Image of FIG. 2.
FIG. 2.

Current vs bias-voltage characteristics of a T-wire laser at various temperatures between 5 and . The inset shows an enlarged view of the vicinity of the threshold voltages. Leakage currents were less than at all the temperatures.

Image of FIG. 3.
FIG. 3.

(a) Photoluminescence spectrum at , where emissions from the T wires, the arm wells, and the stem wells were observed. (b) Electroluminescence spectra of a T-wire laser from the cavity edge for various bias currents at . Continuous-wave single-mode lasing above was observed at . The dashed line in the bottom panel shows the T-wire peak in the photoluminescence spectrum at shown in (a).

Image of FIG. 4.
FIG. 4.

Optical power vs current characteristics at various temperatures. The inset shows several curves at near the threshold currents. At , the sample did not show lasing. (b) Threshold current and (c) differential quantum efficiency plotted against temperature.

Loading

Article metrics loading...

/content/aip/journal/apl/90/9/10.1063/1.2709521
2007-03-01
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature-dependent current injection and lasing in T-shaped quantum-wire laser diodes with perpendicular p- and n-doping layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/9/10.1063/1.2709521
10.1063/1.2709521
SEARCH_EXPAND_ITEM