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(Color online) Room-temperature PR spectrum for the as-grown sample. The PR features near are related to the redshifted GaAsN fundamental gap. The inset highlights the doublet arising from the strained nature of the GaAsN epitaxial layer. Arrows mark both the transitions originating in the GaAsN layer and those due to the GaAs cap/buffer layers ( and ).
(Color online) Room-temperature PR spectrum for the D-treated sample. Solid line reproduces the best fit of the SO PR feature . Arrows mark both the transitions originating in the deuterated GaAsN layer ( and ) and those due to the GaAs cap/buffer layers . In the inset, the expected blueshift of the band gap and of the SO transition energy are reported vs the in-plane compressive strain for GaAs.
(Color online) (a) Reflectance spectra for the as-grown sample, experimental (dashed line) and calculated (solid line) by the best-fit procedure in the subgap wavelength region; (b) the same curves for the D-treated sample.
Sellmeier parameters for the refractive index dispersion of the GaAsN layer in the as-grown and D-treated samples, as obtained in the best fit to the reflectance spectra below the fundamental energy gap. For comparison the reference N-free GaAs epilayer parameters are also reported.
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