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Top view SEM picture of a defect etched polycrystalline silicon layer inside a grain with a high density of intragrain defects (no grain boundaries are present in the image).
(a) Top view SEM and (b) top view EBIC image at RT of two polycrystalline silicon grains. Electrically active intragrain defects are visible with a pattern comparable to that observed in the defect etched layer (see Fig. 1). Due to the difference in orientation of the perpendicular defect lines the difference in orientation of both grains is visible.
(Color online) (a) Global CL spectrum of a polycrystalline-silicon layer obtained at on an area of . The peak positions of two Gaussian functions fitted to the spectrum for energies lower than the band gap are located at 0.85 and . (b) Top view SEM image of a polished and slightly defect-etched polycrystalline-silicon layer. (c) Photon energy map of the same area for the two deep-level transitions found in the global CL spectrum.
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