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Electrical activity of intragrain defects in polycrystalline silicon layers obtained by aluminum-induced crystallization and epitaxy
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10.1063/1.2709643
/content/aip/journal/apl/90/9/10.1063/1.2709643
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/9/10.1063/1.2709643
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Top view SEM picture of a defect etched polycrystalline silicon layer inside a grain with a high density of intragrain defects (no grain boundaries are present in the image).

Image of FIG. 2.
FIG. 2.

(a) Top view SEM and (b) top view EBIC image at RT of two polycrystalline silicon grains. Electrically active intragrain defects are visible with a pattern comparable to that observed in the defect etched layer (see Fig. 1). Due to the difference in orientation of the perpendicular defect lines the difference in orientation of both grains is visible.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Global CL spectrum of a polycrystalline-silicon layer obtained at on an area of . The peak positions of two Gaussian functions fitted to the spectrum for energies lower than the band gap are located at 0.85 and . (b) Top view SEM image of a polished and slightly defect-etched polycrystalline-silicon layer. (c) Photon energy map of the same area for the two deep-level transitions found in the global CL spectrum.

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/content/aip/journal/apl/90/9/10.1063/1.2709643
2007-02-26
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical activity of intragrain defects in polycrystalline silicon layers obtained by aluminum-induced crystallization and epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/9/10.1063/1.2709643
10.1063/1.2709643
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