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(Color online) Transfer characteristics in saturation for a rubrene SC-FET, a pentacene SC-FET, and a pentacene TFT. Forward and reverse sweep are shown but are indistinguishable over the entire operating range for the SC-FETs. The TFT shows only a small current hysteresis near the onset.
Output characteristic of the pentacene TFT revealing the ideal thin-film transistor operation.
(Color online) The rubrene single crystal device is highly stable against gate bias stress. The main panel shows the transfer characteristic measured at prior to the stress sequence (full black line), after of gate bias stress at (dashed red line), and after subsequent gate bias stress at for (dotted green line). The graph includes the forward and reverse sweep in all three cases. The inset shows the drain currents close to the onset voltage.
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