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Organic small molecule field-effect transistors with Cytop™ gate dielectric: Eliminating gate bias stress effects
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10.1063/1.2709894
/content/aip/journal/apl/90/9/10.1063/1.2709894
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/9/10.1063/1.2709894
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Transfer characteristics in saturation for a rubrene SC-FET, a pentacene SC-FET, and a pentacene TFT. Forward and reverse sweep are shown but are indistinguishable over the entire operating range for the SC-FETs. The TFT shows only a small current hysteresis near the onset.

Image of FIG. 2.
FIG. 2.

Output characteristic of the pentacene TFT revealing the ideal thin-film transistor operation.

Image of FIG. 3.
FIG. 3.

(Color online) The rubrene single crystal device is highly stable against gate bias stress. The main panel shows the transfer characteristic measured at prior to the stress sequence (full black line), after of gate bias stress at (dashed red line), and after subsequent gate bias stress at for (dotted green line). The graph includes the forward and reverse sweep in all three cases. The inset shows the drain currents close to the onset voltage.

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/content/aip/journal/apl/90/9/10.1063/1.2709894
2007-02-26
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Organic small molecule field-effect transistors with Cytop™ gate dielectric: Eliminating gate bias stress effects
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/9/10.1063/1.2709894
10.1063/1.2709894
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