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(a) Bottom gate and top contact OTFT used in experiment. (b) Alternative method of pentacene patterning. The first two frames show the first step of metal transfer patterning. After the metal transfer, pentacene is deposited over the whole surface. The last two frames show dry lift-off process with flat PDMS mold for the pentacene patterning.
Examples of pentacene patterned with the dry lift-off method presented here. (a) Optical microscopy (OM) image of pentacene blanket deposited over the metal pattern (equal line and space with linewidth of ) formed by transfer patterning. (b) OM image of the patterned pentacene after dry lift-off with flat PDMS. (c) Cross-sectional scanning electron microscopy (SEM) image of the pentacene patterned in (b). (d) SEM image of complex pentacene pattern obtained with dry lift-off method. The linewidth is .
Electrical characteristics of OTFT (a) vs for the reference device whose active layer was patterned using conventional thermal evaporation with a shadow mask. (b) vs for the device whose active layer was patterned by dry lift-off patterning method. (c) vs for a fixed drain-source voltage of of the device fabricated using the shadow mask method (circle) and dry lift-off patterning method (cross).
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