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Chirp in a transistor laser: Franz-Keldysh reduction of the linewidth enhancement
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View: Figures


Image of FIG. 1.
FIG. 1.

Pulsed (2.5%, ) common-emitter collector characteristics of a transistor laser (TL) of length of and emitter width of . The TL stimulated recombination region, with gain compression (, ), occurs at and . (The further data of Figs. 2–4 are taken from along the curve.)

Image of FIG. 2.
FIG. 2.

Transistor laser (Fig. 1) mode grouping at 987.5, 990.6, and at . At (ii) the two shorter wavelengths are attenuated by with larger voltage Franz-Keldysh effect. Increase in bias to (iii) attenuates the peak, and at (iv) quenches laser operation.

Image of FIG. 3.
FIG. 3.

High-resolution scan ( at ) of the main TL peak of Fig. 2 at for between 2.35 and . The peak does not shift at biases between 2.6 and despite the increase in intensity.

Image of FIG. 4.
FIG. 4.

Spectra of the amplified spontaneous emission of the TL of Fig. 1 in a range between 2.6 and . The peak-to-peak mode spacing is , and the wavelength shift is between and (each voltage step ).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Chirp in a transistor laser: Franz-Keldysh reduction of the linewidth enhancement