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Pulsed (2.5%, ) common-emitter collector characteristics of a transistor laser (TL) of length of and emitter width of . The TL stimulated recombination region, with gain compression (, ), occurs at and . (The further data of Figs. 2–4 are taken from along the curve.)
Transistor laser (Fig. 1) mode grouping at 987.5, 990.6, and at . At (ii) the two shorter wavelengths are attenuated by with larger voltage Franz-Keldysh effect. Increase in bias to (iii) attenuates the peak, and at (iv) quenches laser operation.
High-resolution scan ( at ) of the main TL peak of Fig. 2 at for between 2.35 and . The peak does not shift at biases between 2.6 and despite the increase in intensity.
Spectra of the amplified spontaneous emission of the TL of Fig. 1 in a range between 2.6 and . The peak-to-peak mode spacing is , and the wavelength shift is between and (each voltage step ).
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