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Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition
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10.1063/1.2709993
/content/aip/journal/apl/90/9/10.1063/1.2709993
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/9/10.1063/1.2709993
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Figures

Image of FIG. 1.
FIG. 1.

(a) XTEM image of of Ge film on Ge seed layer grown on low temperature buffer layer on SOI. (b) Scanning electron micrograph of Ge seed layer formed on . (c) Etch pits on Ge film grown on buffer on Si substrate.

Image of FIG. 2.
FIG. 2.

(Color online) Raman spectra of Ge films grown on Ge seed layer on low temperature buffer on Si(100) substrate. The inset shows the probed locations across an wafer.

Image of FIG. 3.
FIG. 3.

(Color online) X-ray diffraction data of of Ge epitaxy/Ge seed/ buffer/Si substrate (red), Ge-seed layer/ buffer/Si substrate (light gray), buffer capped by of Si cap (solid black) with its simulated curve (dash black), and simulated Ge substrate (dot black).

Image of FIG. 4.
FIG. 4.

(Color online) [(a) and (b)] XTEM images of Ge epitaxy on low temperature Ge seed on high temperature buffer at two different points on Si substrate. (c) Raman spectra of Ge film grown on Ge seed layer on high temperature buffer on Si(100) substrate. The inset in this figure shows the probed locations.

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/content/aip/journal/apl/90/9/10.1063/1.2709993
2007-02-28
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/9/10.1063/1.2709993
10.1063/1.2709993
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