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(a) XTEM image of of Ge film on Ge seed layer grown on low temperature buffer layer on SOI. (b) Scanning electron micrograph of Ge seed layer formed on . (c) Etch pits on Ge film grown on buffer on Si substrate.
(Color online) Raman spectra of Ge films grown on Ge seed layer on low temperature buffer on Si(100) substrate. The inset shows the probed locations across an wafer.
(Color online) X-ray diffraction data of of Ge epitaxy/Ge seed/ buffer/Si substrate (red), Ge-seed layer/ buffer/Si substrate (light gray), buffer capped by of Si cap (solid black) with its simulated curve (dash black), and simulated Ge substrate (dot black).
(Color online) [(a) and (b)] XTEM images of Ge epitaxy on low temperature Ge seed on high temperature buffer at two different points on Si substrate. (c) Raman spectra of Ge film grown on Ge seed layer on high temperature buffer on Si(100) substrate. The inset in this figure shows the probed locations.
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