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Monte Carlo simulation of electron transport in degenerate and inhomogeneous semiconductors
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Electron energy distribution function at equilibrium for GaAs at room temperature and the doping of . Theoretical Fermi-Dirac function is plotted for comparison. The rest are Monte Carlo simulation results implementing (a) present algorithm, (b) algorithm of Ref. 6 [Eq. (1)], and (c) without Pauli exclusion principle. The last data are the result of present algorithm for low applied electric field of .

Image of FIG. 2.
FIG. 2.

Relative change of the electronic distribution to the equilibrium (FD distribution) at temperature and the doping density of . Experimental results (solid curve) are after Ref. 8. MC data obtained from our simulation for the same applied electric fields (200, 400, 600, and from top to bottom) are shown by dotted lines. Previous MC simulation results of Ref. 1 are shown by dots (at 900 V/cm).

Image of FIG. 3.
FIG. 3.

(Color online) Comparison between LF method and the present method: distribution function for three different applied electric fields. Solid lines are obtained from the present algorithm and dots are obtained from LF method. For more clarity, the three graphs are shifted upwards by two units, and different valley minima are shown with an arrow.

Image of FIG. 4.
FIG. 4.

(Color online) Band profile, quasi-Fermi level, and electronic temperature for heterostructure at room temperature under a low applied bias (a) without and (b) with PEP. Note that in (b) they are continuous across the junctions.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Monte Carlo simulation of electron transport in degenerate and inhomogeneous semiconductors