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High temperature rapid thermal annealing of phosphorous ion implanted quantum dots
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10.1063/1.2710006
/content/aip/journal/apl/90/9/10.1063/1.2710006
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/9/10.1063/1.2710006
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Figures

Image of FIG. 1.
FIG. 1.

(a) Photoluminescence (PL) spectra measured at of the as-grown and the as-grown and annealed quantum dots (QDs). The QDs are annealed at 750, 800, 850, and for . A Gaussian fit of the PL spectrum of the QDs annealed at is shown by the line with closed circles. (b) The full widths at half maximums (FWHMs) of the PL spectra and the integrated PL intensities of the QDs annealed at different temperatures. The data for the as-grown QDs are plotted for due to their thermal treatment at this temperature during growth.

Image of FIG. 2.
FIG. 2.

The implantation-induced energy shift and the full width at half maximum (FWHM) of the photoluminescence (PL) spectrum of the quantum dots (QDs) implanted with various P ion doses. The FWHMs of the PL spectra of the unimplanted and annealed QDs are also shown (by solid arrows) for comparison. All samples are annealed at either 750 or for .

Image of FIG. 3.
FIG. 3.

The integrated photoluminescence (PL) intensity of the quantum dots (QDs) implanted with various P ion doses. The integrated PL intensities of the unimplanted and annealed samples (only annealed) are also shown for comparison. The QDs are annealed at either 750 or for .

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/content/aip/journal/apl/90/9/10.1063/1.2710006
2007-02-27
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High temperature rapid thermal annealing of phosphorous ion implanted InAs∕InP quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/9/10.1063/1.2710006
10.1063/1.2710006
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