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(a) Overview SEM and (b) detail high-resolution TEM images of catalyst-free GaN NWs on Si(111) substrate. The inset in (a) shows a detail of the crystal structure (scale bar of ). (c) One of the GaN NWs dispersed on the amorphous carbon film for the in situ annealing experiments. (d) TEM image of the area close to the surface of the GaN NW from (c). (e) Same section of the NW after in situ annealing at various temperatures between RT and .
TEM images showing a typical In-terminated GaN NW completely embedded in a C shell. (a) Overview image showing the entire NW. [(b) and (c)] Higher magnification images of two sections of the NW showing the GaN core and the C shell. [(d) and (f)] images of the C shell taken at different positions along the NW indicated by arrows in (a)–(c).
[(a) and (b)] TEM images of the core/shell interface of an In-decorated GaN NW embedded in a C shell. The arrows mark the position of some of the In clusters at the NW surface. (c) Schematic representation of the initial stages of the assembly of the carbon shell—envelope of curved graphene flakes around In clusters (i), serving as a template for extended graphene layers (ii).
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