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Highly efficient oxidation of silicon at low temperatures using atmospheric pressure plasma
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10.1063/1.2710190
/content/aip/journal/apl/90/9/10.1063/1.2710190
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/9/10.1063/1.2710190

Figures

Image of FIG. 1.
FIG. 1.

Oxidation time dependence of oxide layer thickness as a function of . The solid lines show parabolic fits to the data.

Image of FIG. 2.
FIG. 2.

Si–O–Si stretching frequency and refractive index of oxide layers as a function of layer thickness.

Image of FIG. 3.
FIG. 3.

Normalized high-frequency curves of the MOS capacitors.

Tables

Generic image for table
Table I.

Summary of characteristics of the MOS capacitors.

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/content/aip/journal/apl/90/9/10.1063/1.2710190
2007-02-28
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Highly efficient oxidation of silicon at low temperatures using atmospheric pressure plasma
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/9/10.1063/1.2710190
10.1063/1.2710190
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