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Scanning tunneling microscopy study of interfacial structure of InAs quantum dots on InP(001) grown by a double-cap method
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10.1063/1.2710470
/content/aip/journal/apl/90/9/10.1063/1.2710470
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/9/10.1063/1.2710470
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Photoluminescence spectrum in InAs QDs at . Arrows indicate peak energies of emission lines from single QDs with different heights.

Image of FIG. 2.
FIG. 2.

Cross-sectional STM images of [(a) and (b)] InAs QDs and (c) InAs wetting layer obtained at a bias voltage of . Images (b) and (c) were obtained by treating with the local mean equalization filter. (d) Compositional profile of As atoms in the InAs QD along the growth direction. The As fraction was averaged over a distance between A and in Fig. 1(b). (e) Compositional profile of As atoms in the InAs wetting layer along the growth direction. The As fraction was averaged over a distance of in the direction in Fig. 1(c)

Image of FIG. 3.
FIG. 3.

Cross-sectional STM images of InAs QDs with heights of (a) 10, (b) 8, and (c) 6 ML. Sample bias voltage is . (d) Schematic illustration of cross-sectional structure of the InAs QD on the wetting layer and the first InP cap layer in the double-cap procedure.

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/content/aip/journal/apl/90/9/10.1063/1.2710470
2007-02-27
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Scanning tunneling microscopy study of interfacial structure of InAs quantum dots on InP(001) grown by a double-cap method
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/9/10.1063/1.2710470
10.1063/1.2710470
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