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Effects of nitrogen incorporation in grown using radio frequency plasma-assisted molecular beam epitaxy
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10.1063/1.2710751
/content/aip/journal/apl/90/9/10.1063/1.2710751
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/9/10.1063/1.2710751

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Experimental XRD reciprocal space map around the (115) diffraction peak of samples grown at (a) , ; (b) , , , , and , .

Image of FIG. 2.
FIG. 2.

(Color online) Plot of experimental perpendicular mismatch, parallel mismatch, and relaxed mismatch of under (a) different growth temperatures and (b) different plasma powers conditions.

Image of FIG. 3.
FIG. 3.

(Color online) Plot of calculated lattice mismatch vs N content for different N point defects. The four experimental data points were measured using XRD (for lattice mismatch) and SIMS (for N content).

Tables

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Table I.

Calculated N defect content (percentage of N point defects over the total concentration of In and Sb atoms) in samples grown at different conditions.

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/content/aip/journal/apl/90/9/10.1063/1.2710751
2007-03-01
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of nitrogen incorporation in InSb1−xNx grown using radio frequency plasma-assisted molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/9/10.1063/1.2710751
10.1063/1.2710751
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