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(a) Transmission spectrum of the -plane GaN film for and at . The inset shows the unit cell of wurtzite GaN and the choice of coordinates. (b) Spectral responsivity of a Schottky diode photodetector processed from the -plane film for and . The inset depicts a schematic of the device and the measurement geometry.
Spectral responsivity of the NBDC for and at . The left inset displays the measurement configuration. The right inset depicts a polar plot of the measured relative at (circles) as a function of the in-plane polarization angle , the line represents a fit to .
(a) Positive values of and (b) as a function of in-plane strain in an -plane GaN film. The dark regions indicate strain values favorable for NBDC involving the transitions and . The label indicates that the polarization will be detected. (c) Detection bandwidth and (d) central operating wavelength in nanometers for detection involving and [(a) and (b)]. Black squares mark the in-plane strain determined for the investigated -plane GaN film. (e) Positive values of and (f) for detection involving and . (g) and (h) in nanometers for detection involving and [(e) and (f)].
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