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Transition voltage of asymmetric state to bend in pi cell
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10.1063/1.2753492
/content/aip/journal/apl/91/1/10.1063/1.2753492
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/1/10.1063/1.2753492
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Time dependent director profiles, driving voltage and the surface tilt angle. The cell is driven by a low voltage to state, then a pulse voltage is applied and driven the cell to bend state, at which the director profile is stable under the low voltage.

Image of FIG. 2.
FIG. 2.

Time dependent director profiles, driving voltage, and the surface tilt angle. The cell is driven by voltage, then a pulse voltage is applied, at which the director profile is stable under the low voltage.

Image of FIG. 3.
FIG. 3.

Pretilt angle dependent transition voltage for the cell changing from to bend state under two anchoring energy conditions ( and ).

Image of FIG. 4.
FIG. 4.

Anchoring energy dependent transition voltage.

Image of FIG. 5.
FIG. 5.

Surface viscosity dependent transition voltage.

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/content/aip/journal/apl/91/1/10.1063/1.2753492
2007-07-02
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transition voltage of asymmetric H state to bend in pi cell
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/1/10.1063/1.2753492
10.1063/1.2753492
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