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Ohmic contacts to heterostructures with a thin GaN cap
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10.1063/1.2753497
/content/aip/journal/apl/91/1/10.1063/1.2753497
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/1/10.1063/1.2753497

Figures

Image of FIG. 1.
FIG. 1.

Morphology of the contact annealed at for in .

Image of FIG. 2.
FIG. 2.

Morphology of (a) a contact annealed at for in and (b) a contact annealed at for in .

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM image of a contact annealed at for in . The uneven top surface is due to removal of metal during ion milling for TEM sample preparation and is not representative of the actual surface morphology.

Tables

Generic image for table
Table I.

contacts directly annealed at for in .

Generic image for table
Table II.

contacts directly annealed at for in .

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/content/aip/journal/apl/91/1/10.1063/1.2753497
2007-07-02
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: V∕Al∕V∕Ag Ohmic contacts to n-AlGaN∕GaN heterostructures with a thin GaN cap
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/1/10.1063/1.2753497
10.1063/1.2753497
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