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Influence of temperature and photoexcitation density on the quantum efficiency of defect emission in ZnO powders
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10.1063/1.2753540
/content/aip/journal/apl/91/1/10.1063/1.2753540
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/1/10.1063/1.2753540
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Low-temperature photoluminescence spectra of ZnO powders for excitation density of .

Image of FIG. 2.
FIG. 2.

(Color online) Excitation power dependence of external quantum efficiency for unannealed and annealed (with and without sulfur) ZnO powders.

Image of FIG. 3.
FIG. 3.

(Color online) Excitation power dependence for the near band edge (UV) and defect (GR) spectral components of the photoluminescence for the annealed sample. The values indicate the power scaling exponents.

Image of FIG. 4.
FIG. 4.

(Color online) Temperature quenching of the integrated near band edge (UV) and defect (GR) photoluminescence bands for the annealed sample. The thermal activation energy from an Arrhenius fit (dotted curve) of the GR PL intensity quenching is .

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/content/aip/journal/apl/91/1/10.1063/1.2753540
2007-07-02
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of temperature and photoexcitation density on the quantum efficiency of defect emission in ZnO powders
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/1/10.1063/1.2753540
10.1063/1.2753540
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