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Enhancement of the room temperature luminescence of InAs quantum dots by GaSb capping
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10.1063/1.2753716
/content/aip/journal/apl/91/1/10.1063/1.2753716
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/1/10.1063/1.2753716
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Integrated RHEED intensity of the (002) transmission diffraction spot due to the presence of QDs on the surface for different growth sequences. (a) InAs QDs capped with GaAs. (b) InAs QDs exposed to Sb for and then capped with GaAs. (c) InAs QDs exposed to Sb for and then capped with 3 ML of GaAs and 2 ML of GaSb. The labels for steps 1, 2, 3, and 4 mark the end of each of the following layers: InAs, Sb exposure, 3 ML GaAs cap, and 2 ML GaSb cap. After the last step, all samples are capped with GaAs at .

Image of FIG. 2.
FIG. 2.

Room temperature photoluminescence corresponding to (a) InAs QDs, (b) InAs QDs exposed to Sb, (c) InAs QDs capped with a 2 ML GaSb layer. (d) InAs QDs exposed to Sb, capped with a 3 ML GaAs barrier and then a 2 ML GaSb layer. The excitation power is at .

Image of FIG. 3.
FIG. 3.

Normalized low temperature PL spectra at different excitation powers for QDs.

Image of FIG. 4.
FIG. 4.

Photoluminescence intensity as a function of temperature for InAs and . The excitation power is at .

Image of FIG. 5.
FIG. 5.

Room temperature photoluminescence as a function of the capping temperature .

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/content/aip/journal/apl/91/1/10.1063/1.2753716
2007-07-05
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancement of the room temperature luminescence of InAs quantum dots by GaSb capping
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/1/10.1063/1.2753716
10.1063/1.2753716
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