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Optical phonons assisted infrared absorption in based bolometer
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10.1063/1.2753746
/content/aip/journal/apl/91/1/10.1063/1.2753746
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/1/10.1063/1.2753746
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic cross view of based FET illustrates 1st layer: forming thermal isolated membrane; 2nd Al layer: forming gate and infrared reflectors; 3rd layer: forming gate insulator; 4th layer: forming the channel; and 5th layer forming the passivation and infrared absorbers in particular.

Image of FIG. 2.
FIG. 2.

(Color online) Achievable normal incidence infrared absorption for bolometer with insulating : (a) absorbance at and (b) absorption spectrum at , corresponding to at . When , corresponding to , is achieved, while , maximum is reached.

Image of FIG. 3.
FIG. 3.

(Color online) Passivation thickness and transition dependent normal incidence infrared absorptions at (a) , (b) 3.4, (c) 9.1, and (d) . corresponds to additional phase shift on reflection for the APS. Solid and dash lines represent the insulating and metallic , respectively.

Image of FIG. 4.
FIG. 4.

(Color online) Absorption spectra for - and -polarized portions at incident angle (a) 0°, (b) 15°, (c) 30°, and (d) 45° off the normal when . Solid and dash lines represent insulating and metallic , respectively.

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/content/aip/journal/apl/91/1/10.1063/1.2753746
2007-07-03
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical phonons assisted infrared absorption in VO2 based bolometer
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/1/10.1063/1.2753746
10.1063/1.2753746
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