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(Color online) Schematic cross view of based FET illustrates 1st layer: forming thermal isolated membrane; 2nd Al layer: forming gate and infrared reflectors; 3rd layer: forming gate insulator; 4th layer: forming the channel; and 5th layer forming the passivation and infrared absorbers in particular.
(Color online) Achievable normal incidence infrared absorption for bolometer with insulating : (a) absorbance at and (b) absorption spectrum at , corresponding to at . When , corresponding to , is achieved, while , maximum is reached.
(Color online) Passivation thickness and transition dependent normal incidence infrared absorptions at (a) , (b) 3.4, (c) 9.1, and (d) . corresponds to additional phase shift on reflection for the APS. Solid and dash lines represent the insulating and metallic , respectively.
(Color online) Absorption spectra for - and -polarized portions at incident angle (a) 0°, (b) 15°, (c) 30°, and (d) 45° off the normal when . Solid and dash lines represent insulating and metallic , respectively.
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