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Quantum confinement of crystalline silicon nanotubes with nonuniform wall thickness: Implication to modulation doping
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) [(a)–(i)] Isosurface plots (in the plane) of the wave functions of the valence band maximum (VBM) (bottom) and conduction band minimum (CBM) (top), together with corresponding band gaps, for SiNTs and SiNWs. Blue (dark gray) and yellow (light gray) regions correspond to positive and negative, respectively. The ball-and-stick structure models (viewed from the top) of corresponding SiNTs of SiNWs are plotted on the background with filled gray and light gray circles for Si and H atoms. All those isosurfaces correspond to an isovalue of . (j) Projected density of states of Si atoms in the effective confinement region (ECR) and other region. The CBM and VBM are labeled by arrows. The atomic structure is shown on the right as an inset and the ECR is indicated by gray background. (Filled yellow and gray circles for Si and H atoms.)

Image of FIG. 2.
FIG. 2.

(Color online) (a) Band structure for a P doped nanotube and the wave function of its lowest conduction band above the defect level together with its structure model. Filled yellow, light gray, and purple circles stand for Si, H, and P atoms. (b) Two-dimensional maps of on-site potential on transversal planes sectioning the tube.

Image of FIG. 3.
FIG. 3.

Imaginary part of the dielectric function polarized along the axial direction for SiNWs and SiNTs shown in Figs. 1(i), 1(a), 1(d), 1(f), and 1(h). The vertical lines and arrows indicate the band gaps and absorption edges, respectively. The absorption peaks are marked with inverted gray triangles.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quantum confinement of crystalline silicon nanotubes with nonuniform wall thickness: Implication to modulation doping