1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Polarity inversion of type II superlattice photodiodes
Rent:
Rent this article for
USD
10.1063/1.2779855
/content/aip/journal/apl/91/10/10.1063/1.2779855
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/10/10.1063/1.2779855
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Structural characterization of InAsSb layer. (a) AFM surface with rms roughness of and (b) high resolution x-ray diffraction revealing lattice mismatch of different InAsSb structures to GaSb substrate.

Image of FIG. 2.
FIG. 2.

(Color online) vs GaSb capping layer thickness. Inset: a scanning electron microscopy image of device’s mesa with overhang GaSb area at the sidewall.

Image of FIG. 3.
FIG. 3.

(Color online) Quantum efficiency of structures with different GaSb capping layer’s thicknesses. Red dotted line is spectra of -on- reference structure. A superlattice thickness of the structures is .

Image of FIG. 4.
FIG. 4.

(Color online) Fabry-Perot slope vs device thickness. Inset: linear relation between peak/valley positions and interference order of studied samples.

Loading

Article metrics loading...

/content/aip/journal/apl/91/10/10.1063/1.2779855
2007-09-04
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Polarity inversion of type II InAs∕GaSb superlattice photodiodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/10/10.1063/1.2779855
10.1063/1.2779855
SEARCH_EXPAND_ITEM