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Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor
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10.1063/1.2780058
/content/aip/journal/apl/91/10/10.1063/1.2780058
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/10/10.1063/1.2780058
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Ultimate saturation velocity as a function of gate voltage for a MOSFET channel with .

Image of FIG. 2.
FIG. 2.

(Color online) Ratio of the saturation point drain velocity to ultimate saturation velocity as a function of drain voltage beyond the onset of saturation for , 0.8, 0.9, 1.0, 1.1, and 1.2.

Image of FIG. 3.
FIG. 3.

(Color online) characteristics of MOSFET for gate voltages , 0.8, 0.9, 1.0, 1.1, and 1.2. The solid lines are from Eq. (7) in the range with extension to . The dotted lines are from Eq. (8) and are extension for . The dashed lines are extensions for for . Markers are the experimental results extracted from Ref. 10.

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/content/aip/journal/apl/91/10/10.1063/1.2780058
2007-09-06
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/10/10.1063/1.2780058
10.1063/1.2780058
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